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| S1PHB55 Single Phase Half Controlled Bridge With Free Wheeling Diode Dimensions in mm (1mm=0.0394") Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 S1PHB55-08 S1PHB55-12 S1PHB55-14 S1PHB55-16 S1PHB55-18 Symbol IdAV TK=85oC, module IdAVM module IFRMS, ITRMS per leg TVJ=45oC VR=0 ITSM, IFSM TVJ=TVJM VR=0 2 Test Conditions Maximum Ratings 55 55 41 Unit A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=50A 550 600 500 550 1520 1520 1250 1250 150 A It TVJ=45oC VR=0 TVJ=TVJM VR=0 A2s TVJ=125oC f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=0.3A diG/dt=0.3A/us (dv/dt)cr PGM PGAVM VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA A/us non repetitive, IT=1/2IdAV 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 t=1min t=1s 2500 3000 _ 5+15% _ 44+15% TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=500us V/us W W V o C V~ Nm lb.in. g Mounting torque (M5) (10-32 UNF) 110 S1PHB55 Single Phase Half Controlled Bridge With Free Wheeling Diode Symbol IR, ID VT VTO rT VGT IGT VGD IGD IL IH tgd tq tp=10us; IG=0.45A; diG/dt=0.45A/us o Test Conditions TVJ=TVJM; VR=VRRM; VD=VDRM IT=80A; TVJ=25 C For power-loss calculations only VD=6V; VD=6V; TVJ=TVJM; TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM o o o Characteristic Values 5 1.64 0.85 11 1.5 1.6 100 200 0.2 5 Unit mA V V m V mA V mA mA mA us us TVJ=25 C 450 200 2 typ. 250 0.9 0.18 1.1 0.22 16.1 7.1 50 TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us TVJ=TVJM; IT=20A; tp=200us; VR=100V VD=2/3VDRM; dv/dt=15V/us; di/dt=-10A/us per thyristor/Diode; DC per module per thyristor/Diode; DC per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration RthJC RthJK dS dA a K/W K/W mm mm m/s2 |
Price & Availability of S1PHB55-08
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